Volume 15, Issue 4 (December 2019)                   IJEEE 2019, 15(4): 477-484 | Back to browse issues page

XML Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

El Alaoui M, Farah F, El Khadiri K, Qjidaa H, Aarab A, Lakhssassi A et al . Design and Analysis of New Level Shifter With Gate Driver for Li-Ion Battery Charger in 180nm CMOS Technology. IJEEE 2019; 15 (4) :477-484
URL: http://ijeee.iust.ac.ir/article-1-1428-en.html
Abstract:   (3202 Views)
In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with gate driver achieves a propagation delay of less than 0.25ns and the total area is only 0.05mm2. The proposed level shifter with gate driver was designed, simulated and layouted in Cadence using TSMC 180nm CMOS technology.
Full-Text [PDF 923 kb]   (2249 Downloads)    
Type of Study: Research Paper | Subject: Microelectronics
Received: 2019/01/29 | Revised: 2019/04/13 | Accepted: 2019/04/14

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

Creative Commons License
© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.