جلد 6، شماره 2 - ( 3-1389 )                   جلد 6 شماره 2 صفحات 77-83 | برگشت به فهرست نسخه ها

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Fathipour M, Refan M H, Ebrahimi S M. Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping. IJEEE. 2010; 6 (2) :77-83
URL: http://ijeee.iust.ac.ir/article-1-290-fa.html
Natural Frequencies, Pull-in Voltage, Retrograde Channel, Resonant Suspended Gate (RSG) MOSFET.. . 1389; 6 (2) :77-83

URL: http://ijeee.iust.ac.ir/article-1-290-fa.html


چکیده:   (7224 مشاهده)
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.
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نوع مطالعه: Research Paper | موضوع مقاله: 2-Electronic Devices
دریافت: ۱۳۸۹/۳/۱۹