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DOI: 10.22068/IJEEE.12.2.147

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Akbari Eshkalak M. Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures. IJEEE. 2016; 12 (2) :147-153
URL: http://ijeee.iust.ac.ir/article-1-960-fa.html
Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures. . 1395; 12 (2) :147-153

URL: http://ijeee.iust.ac.ir/article-1-960-fa.html


چکیده:   (1481 مشاهده)

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product compared with low-temperature GNRFET (LT-GNRFET) and medium-temperature GNRFET (MTGNRFET). Besides, the LT-GNRFET demonstrates the lowest off-state current and the highest ratios of Ion/Ioff, average velocity and mobile charge. In addition, the LT-GNRFET has the highest gate and quantum capacitances among three aforementioned GNRFETs.

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نوع مطالعه: Research Paper | موضوع مقاله: 2-Semiconductor Devices
دریافت: ۱۳۹۵/۳/۳۱ | پذیرش: ۱۳۹۵/۳/۳۱ | انتشار: ۱۳۹۵/۳/۳۱

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