In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our model, we have compared our results with those obtained by using open-source software known as FETToy. This comparison shows that the RMS errors in our calculated IDS, under various conditions, are smaller than the RMS errors in IDS values calculated by the existing analytical models published by others.

Keywords: Carbon Nanotube Field Effect Transistor , Neural Network , Neural Space Mapping

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