en 2-Semiconductor Devices Semiconductor Devices Research Paper Research Paper <div dir="rtl" style="text-align: left;"><span style="font-family:Times New Roman;"><span style="font-size:12.0pt">An analysis of 6&times;6 &micro;m²GaAs/AlAs Asymmetric Spacer Layer Tunnel diode has been conducted to evaluate the DC and RF characteristics at different bias conditions. At zero voltage operation, the diode exhibited a measured curvature coefficient of 22 V^-1, corresponding to a junction resistance of 27 </span><span lang="EN-GB" style="font-size:12.0pt">kΩ. </span><span style="font-size:12.0pt">The measured and simulated S₁₁ </span><span style="font-size:16px;">reflection coefficient of the integrated detector including the diode, matching circuit, and output capacitance achieved to be less than -10 dB at the desired frequency. The extracted low series resistance and junction capacitance of the tunnel diode resulted a high voltage sensitivity of 3650 V/W and low noise equivalent power of</span><span style="font-size:12.0pt"> </span><span style="font-size:12.0pt">5.5 pW/</span><span lang="EN-GB" style="font-size:12.0pt"><span style="position:relative"><span style="top:3.0pt"><img alt="" id="_x0000_i1025" src="data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAB4AAAAVCAIAAADelck2AAAAAXNSR0IArs4c6QAAAAlwSFlzAAAOxAAADsQBlSsOGwAAARlJREFUSEvVlUEWgiAQhrGz9Fp5gjxBu05B19FrtGoTXsRVeBeaAQQGGX3pc9HsDPj4559fq4wx4pg6HYNF6oFoAYZwpeSulhZU96+h1Qs3ry3x6PEz1JfzDt0senw/6/ttB5kdY04eu6ay1XSjva9/uOfww1wF45iS18xo3V6FkCq6b6csFWs5k5A52SApBfmr+GF6tNYkC1vI86ga3UrolCgCQXmjVmNeqWewITyCMnBOGNRLm2PIxHw8kU/DeeO4+GnyXmE7fmuBXDS6RA7cBG0Pu81bjKZ6ndyYkClcDDnzNfQ4JSTRq0EmzCoNnxUORQMdB+hHG6IQNwKXjhiXSK7tofJw1r5FhXX6yqDChffrN371l39gX47PfRujsvbIAAAAAElFTkSuQmCC" style="width:22.5pt; height:15.75pt" > </span></span></span><span style="font-size:12.0pt">&nbsp;at 11 GHz&nbsp;</span></span><span style="font-size:10.0pt"><span new="" roman="" style="font-family:" times=""><span style="font-size:16px;">resonant frequency and -27 dBm input power. The developed detector model can be extended to implement RF detectors operating at frequencies reaching mm-wave regime applications. This is with consideration of the requirements for sub-micrometer scale mesa devices, eliminating the effects of associated parasitic elements and improved matching network performance</span>.</span></span></div> ASPAT Detector, ADS Model, Reflection Coefficient, Noise Equivalent Power. 105 114 http://ijeee.iust.ac.ir/browse.php?a_code=A-10-5520-1&slc_lang=en&sid=1 Omar S Abdulwahid Omar.abdulwahid@uomosul.edu.iq 1800319475328460017210 1800319475328460017210 Yes Department of Mechatronics Engineering, College of Engineering, University of Mosul, Mosul, Iraq. Saad G Muttlak Saad.g.mutlak@tu.edu.iq 1800319475328460017211 1800319475328460017211 No Department of Electrical Engineering, Tikrit University, Tikrit, Iraq. James Sexton j.sexton@manchester.ac.uk 1800319475328460017212 1800319475328460017212 No Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. Michael J Kelly mjk1@eng.cam.ac.uk 1800319475328460017213 1800319475328460017213 No Department of Electrical Engineering, Cambridge University, Cambridge, UK. Mohamed Missous m.missous@manchester.ac.uk 1800319475328460017214 1800319475328460017214 No Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK.