<?xml version="1.0" encoding="utf-8"?>
<journal>
<title>IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING</title>
<title_fa></title_fa>
<short_title>IJEEE</short_title>
<subject>Engineering &amp; Technology</subject>
<web_url>http://ijeee.iust.ac.ir</web_url>
<journal_hbi_system_id>18</journal_hbi_system_id>
<journal_hbi_system_user>agent2</journal_hbi_system_user>
<journal_id_issn>1735-2827</journal_id_issn>
<journal_id_issn_online>1735-2827</journal_id_issn_online>
<journal_id_pii></journal_id_pii>
<journal_id_doi></journal_id_doi>
<journal_id_iranmedex></journal_id_iranmedex>
<journal_id_magiran></journal_id_magiran>
<journal_id_sid></journal_id_sid>
<journal_id_nlai></journal_id_nlai>
<journal_id_science></journal_id_science>
<language>en</language>
<pubdate>
	<type>jalali</type>
	<year>1390</year>
	<month>9</month>
	<day>1</day>
</pubdate>
<pubdate>
	<type>gregorian</type>
	<year>2011</year>
	<month>12</month>
	<day>1</day>
</pubdate>
<volume>7</volume>
<number>4</number>
<publish_type>online</publish_type>
<publish_edition>1</publish_edition>
<article_type>fulltext</article_type>
<articleset>
	<article>


	<language>en</language>
	<article_id_doi></article_id_doi>
	<title_fa></title_fa>
	<title>A Novel Very High Performance CMOS Current Mirror with extremely low input and ultra high output resistance</title>
	<subject_fa>2-Analog Circuits</subject_fa>
	<subject>Analog Circuits</subject>
	<content_type_fa>Research Paper </content_type_fa>
	<content_type>Research Paper </content_type>
	<abstract_fa></abstract_fa>
	<abstract>In this paper a novel very high performance current mirror is presented. It favorably benefits from such excellent parameters as: Ultra high output resistance (36.9GΩ), extremely low input resistance (0.0058Ω), low output (~0.18V) and low input voltage (~0.18V) operation, very low power consumption (20μW), very low offset current (1pA), ultra wide current dynamic range (150dB), and ultra high accuracy (error = 0.003%). The circuit has a very simple compact architecture and uses a single 1V power supply. The qualitative performance of the circuit is validated with HSPICE simulations using HSPICE TSMC 0.18μm CMOS technology.</abstract>
	<keyword_fa></keyword_fa>
	<keyword>Ultra High Output Resistance,Extremely Low Input Resistance,Low Voltage,Low Power,Ultra High Accurate,Current Mirror,</keyword>
	<start_page>235</start_page>
	<end_page>240</end_page>
	<web_url>http://ijeee.iust.ac.ir/browse.php?a_code=A-10-46-1&amp;slc_lang=en&amp;sid=1</web_url>


<author_list>
	<author>
	<first_name>H.</first_name>
	<middle_name></middle_name>
	<last_name>Faraji Baghtash</last_name>
	<suffix></suffix>
	<first_name_fa></first_name_fa>
	<middle_name_fa></middle_name_fa>
	<last_name_fa></last_name_fa>
	<suffix_fa></suffix_fa>
	<email>hfaraji@iust.ac.ir</email>
	<code>180031947532846001675</code>
	<orcid>180031947532846001675</orcid>
	<coreauthor>No</coreauthor>
	<affiliation>Iran university of science and technology (IUST) electrical and electronics engineering faculty</affiliation>
	<affiliation_fa></affiliation_fa>
	 </author>


	<author>
	<first_name>S. J.</first_name>
	<middle_name></middle_name>
	<last_name>Azhari</last_name>
	<suffix></suffix>
	<first_name_fa></first_name_fa>
	<middle_name_fa></middle_name_fa>
	<last_name_fa></last_name_fa>
	<suffix_fa></suffix_fa>
	<email>azhari@iust.ac.ir</email>
	<code>180031947532846001676</code>
	<orcid>180031947532846001676</orcid>
	<coreauthor>Yes
</coreauthor>
	<affiliation>Iran university of science and technology (IUST) electrical and electronics engineering faculty/Electronics research center</affiliation>
	<affiliation_fa></affiliation_fa>
	 </author>


	<author>
	<first_name>Kh.</first_name>
	<middle_name></middle_name>
	<last_name>Monfaredi</last_name>
	<suffix></suffix>
	<first_name_fa></first_name_fa>
	<middle_name_fa></middle_name_fa>
	<last_name_fa></last_name_fa>
	<suffix_fa></suffix_fa>
	<email>khmonfaredi@iust.ac.ir</email>
	<code>180031947532846001677</code>
	<orcid>180031947532846001677</orcid>
	<coreauthor>No</coreauthor>
	<affiliation>Iran university of science and technology (IUST) electrical and electronics engineering faculty/Electronics research center</affiliation>
	<affiliation_fa></affiliation_fa>
	 </author>


</author_list>


	</article>
</articleset>
</journal>
