Volume 6, Issue 2 (June 2010)                   IJEEE 2010, 6(2): 70-76 | Back to browse issues page

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Yousefi R, Moravvej-Farshi M K, Saghafi K. Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors. IJEEE 2010; 6 (2) :70-76
URL: http://ijeee.iust.ac.ir/article-1-289-en.html
Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors
R. Yousefi , M. K. Moravvej-Farshi , K. Saghafi
Abstract:   (11341 Views)
In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our model, we have compared our results with those obtained by using open-source software known as FETToy. This comparison shows that the RMS errors in our calculated IDS, under various conditions, are smaller than the RMS errors in IDS values calculated by the existing analytical models published by others.
Keywords: Carbon Nanotube Field Effect Transistor , Neural Network , Neural Space Mapping
Full-Text [PDF 332 kb]   (3380 Downloads)    
Type of Study: Research Paper | Subject: Quantum Electronics
Received: 2010/06/09
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.