Volume 22, Issue 1 (March 2026)                   IJEEE 2026, 22(1): 3653-3653 | Back to browse issues page

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Rathod A P S, Mishra P K, Mishra A. Design and Analysis of Double Channel Organic Field Effect Transistor with Bottom Gate. IJEEE 2026; 22 (1) :3653-3653
URL: http://ijeee.iust.ac.ir/article-1-3653-en.html
Design and Analysis of Double Channel Organic Field Effect Transistor with Bottom Gate
Arun Pratap Singh Rathod , Pawan Kumar Mishra , Abhilasha Mishra
Abstract:   (39 Views)
In recent years, organic field effect transistors, also known as OFETs, have witnessed a substantial demand, mainly due to their expanding applications in the display and sensor industries, owing to simple fabrication techniques and cost-effective raw materials. But due to limited charge mobility, its applications are mostly focused on non-computing applications. Since OFETs are fundamental elements employed in an electronic circuit, the performance of the whole electronic device is correlated with its performance. The development of high performance OFET is particularly beneficial for establishing non-silicon-based chip manufacturing in developing countries worldwide. In an attempt to develop a high performance OTFT, double channel bottom gate organic field effect transistor (DCBG OFET) is proposed in this research article. DCBG OFET or OTFT is a single gate device comparable to a bottom gate bottom contact (BGBC) OTFT in structure, but it generates 4 times higher drain current in its conduction channel with identical material composition and structural dimensions compared to its analogous. A comprehensive comparative study has been presented here investigating performance parameters like transconductance, threshold voltage, subthreshold slope, linear and saturation mobility, etc., to determine the functional superiority of the DCBG OFET over other single gate OTFT structures like BGBC, top gate bottom contact (TGBC), and bottom gate top contact (BGTC) OTFTs. It has been observed that DCBG OTFT exhibits a four-fold improvement in the drain current with respect to conventional single gate OTFTs, and staggering 300% enhancements in parameters like transconductance, linear and saturation mobility are also observed in DCBG OFET over other OTFT architectures with matching material configuration and structural dimensions, operational under the identical voltage conditions.
Keywords: Double conduction channel, OTFT, BGBC, DCBG, OFET, Drain current.
Full-Text [PDF 1576 kb]   (12 Downloads)    
Type of Study: Research Paper | Subject: Semiconductor Devices
Received: 2024/12/28 | Revised: 2025/11/08 | Accepted: 2025/08/31
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.