Volume 8, Number 1 (March 2012)                   IJEEE 2012, 8(1): 45-54 | Back to browse issues page

XML Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Bijari A, Keshmiri S H, Wanburee W. Nonlinear Modeling and Investigating the Nonlinear Effects on Frequency Response of Silicon Bulk-mode Ring Resonator. IJEEE. 2012; 8 (1) :45-54
URL: http://ijeee.iust.ac.ir/article-1-423-en.html

Abstract:   (3915 Views)
This paper presents a nonlinear analytical model for micromechanical silicon ring resonators with bulk-mode vibrations. A distributed element model has been developed to describe the dynamic behavior of the micromechanical ring resonator. This model shows the nonlinear effects in a silicon ring resonator focusing on the effect of large amplitudes around the resonance frequency, material and electrical nonlinearities. Through the combination of geometrical and material nonlinearities, closed-form expressions for third-order nonlinearity in mechanical stiffness of bulk-mode ring resonators are obtained. Using the perturbation method and the method of harmonic balance, the expressions for describing the effect of nonlinearities on the resonance frequency and stability are derived. The results, which show the effect of varying the AC drive voltage, initial gap, DC applied voltage and the quality factor on the frequency response and resonant frequencies, are discussed in detail. The nonlinear model introduces an appropriate method in the field of bulk-mode ring resonator design for achieving sufficient power handling and low motional resistance.
Full-Text [PDF 465 kb]   (1514 Downloads)    
Type of Study: Research Paper | Subject: Semiconductor Devices
Received: 2011/08/10 | Accepted: 2012/02/15 | Published: 2013/12/30

Add your comments about this article : Your username or email:
Write the security code in the box

© 2015 All Rights Reserved | Iranian Journal of Electrical and Electronic Engineering

Designed & Developed by : Yektaweb