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 | Volume 6, Number 2 (2010) |  | |
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 | Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors |  |
| | Author(s): R. Yousefi, M. K. Moravvej-Farshi , K. Saghafi | | | Study Type: Research Paper | Subject: Quantum Electronics | | | Article abstract: | | In this paper, using the neural space mapping (NSM) concept, we present a
SPICE-compatible modeling technique to modify the conventional MOSFET equations, to
be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in
order to correct conventional MOSFET equations so that they could be used for carbon
nanotube transistors. To demonstrate the accuracy of our model, we have compared our
results with those obtained by using open-source software known as FETToy. This
comparison shows that the RMS errors in our calculated IDS, under various conditions, are
smaller than the RMS errors in IDS values calculated by the existing analytical models
published by others. | | | Keywords: Carbon Nanotube Field Effect Transistor, Neural Network, Neural Space Mapping., | |
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| Iranian Journal of Electrical and Electronic Engineering | |
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