Volume 14, Issue 2 (June 2018)                   IJEEE 2018, 14(2): 143-152 | Back to browse issues page

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Acharyya A. Gallium Phosphide IMPATT Sources for Millimeter-Wave Applications. IJEEE 2018; 14 (2) :143-152
URL: http://ijeee.iust.ac.ir/article-1-1108-en.html
Gallium Phosphide IMPATT Sources for Millimeter-Wave Applications
A. Acharyya
Abstract:   (3799 Views)
The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to operate at mm-wave atmospheric window frequencies such as 94, 140 and 220 GHz. Results show that the DDR GaP IMPATTs are capable of delivering significantly higher RF power at the above mentioned window frequencies as compared to the DDR IMPATTs based on the conventional narrow bandgap (NBG) base materials such as Si, GaAs and InP.
Keywords: Gallium Phosphide , IMPATT Diode , Large-Signal , Millimeter-Wave
Full-Text [PDF 608 kb]   (1831 Downloads)    
Type of Study: Research Paper | Subject: Semiconductor Devices
Received: 2017/06/12 | Revised: 2018/06/17 | Accepted: 2017/12/04
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Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.