Volume 20, Issue 3 (September 2024)                   IJEEE 2024, 20(3): 1-11 | Back to browse issues page

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Alnajjar S, K. Mohammed P D K. Design of a Novel Barrier-Well Asymmetric Spacer Layer Tunnel Diodes for Implantable Rectenna Circuits. IJEEE 2024; 20 (3) :1-11
URL: http://ijeee.iust.ac.ir/article-1-2738-en.html
Design of a Novel Barrier-Well Asymmetric Spacer Layer Tunnel Diodes for Implantable Rectenna Circuits
Shamil Alnajjar , Prof. Dr. Khalid K. Mohammed
Abstract:   (427 Views)
This work presents an analysis and design of the two barrier-quantum well asymmetric spacer tunnel layer (QW-ASPAT) diodes for implantable rectenna circuits application. The RF and DC characteristic of a 10×10μm2 QW-ASPAT devices based on GaAs and In0.53Ga0.47As platform was simulated and extracted by using SILVACO atlas software. The highest extracted curvature coefficient, kv value of the both QW-ASPAT devices at zero bias was about 33V-1 compared with the standard structure GaAs/InGaAs was about 13V-1. The effects of changing in the thickness of the thin AlAs-barrier, the well width, and the spacer layer are fully investigated on the non-linear relationship between current and voltage of these diodes. A CV simulation was carried out, and it was found that the addition of the quantum-well layer between spacers and barrier reduced the junction capacitance of the QW-ASPAT device when compared with standard devices. The cut-off frequency of the proposed QW-GaAs and QW-InGaAs devices are 26GHz and 46GHz respectively. Finally, we conclude that the QW-ASPAT device is the best structure and can be used for microwave rectifiers in the miniaturized integrated rectenna systems.
Keywords: QW-ASPAT Diodes, SILVACO Atlas, and Implantable Rectenna Circuits.
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Type of Study: Research Paper | Subject: Solid State Devices And Circuits
Received: 2022/12/08 | Revised: 2024/10/06 | Accepted: 2024/08/22
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Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.