Volume 20, Issue 1 (March 2024)                   IJEEE 2024, 20(1): 82-92 | Back to browse issues page

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Salimi A, Ebrahimi B, Dousti M. Proposing Very Low Power Three-Valued Flip-Flops by Using CNTFET Transistors. IJEEE 2024; 20 (1) :82-92
URL: http://ijeee.iust.ac.ir/article-1-3066-en.html
Proposing Very Low Power Three-Valued Flip-Flops by Using CNTFET Transistors
Amirhossein Salimi , Behzad Ebrahimi , Massoud Dousti
Abstract:   (347 Views)
The scaling limitations of Complementary Metal-Oxide-Semiconductor (CMOS) transistors to achieve better performance have led to the attention of other structures to improve circuit performance. One of these structures is multi-valued circuits. In this paper, we will first study Carbon Nanotube Transistors (CNT). CNT transistors offer a viable means to implement multi-valued logic due to their variable and controllable threshold voltage. Subsequently, we delve into the realm of three-valued flip-flop circuits, which find extensive utility in digital electronics. Leveraging the insights gained from our analysis, we propose a novel D-type flip-flop structure. The presented structure boasts a remarkably low power consumption, showcasing a reduction exceeding 61% compared to other existing structures. Furthermore, the proposed circuit incorporates a reduced number of transistors, resulting in a reduced footprint. Importantly, this circuit exhibits negligible static power consumption in generating intermediate values, rendering it robust against process variations.  Overall, the proposed circuits demonstrate a 29.7% increase in delay compared to the compared structures. However, they showcase a 96.1% reduction in power-delay product (PDP) compared to the other structures. The number of transistors is also 8.3% less than other structures. Additionally, their figure of merits (FOM) are 19.7% better than the best-compared circuit, underscoring its advantages in power efficiency, chip area, and performance.
Keywords: CNTFET, Flip-Flop, High Performance, Low Power, Multi-Valued
Full-Text [PDF 1213 kb]   (178 Downloads)    
Type of Study: Research Paper | Subject: VLSI
Received: 2023/09/18 | Revised: 2024/05/13 | Accepted: 2024/03/19
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.