Volume 12, Issue 2 (June 2016)                   IJEEE 2016, 12(2): 147-153 | Back to browse issues page

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Akbari Eshkalak M. Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures. IJEEE 2016; 12 (2) :147-153
URL: http://ijeee.iust.ac.ir/article-1-960-en.html
Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures
M. Akbari Eshkalak
Abstract:   (5622 Views)

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product compared with low-temperature GNRFET (LT-GNRFET) and medium-temperature GNRFET (MTGNRFET). Besides, the LT-GNRFET demonstrates the lowest off-state current and the highest ratios of Ion/Ioff, average velocity and mobile charge. In addition, the LT-GNRFET has the highest gate and quantum capacitances among three aforementioned GNRFETs.

Keywords: GNRFET , Ambient Temperature , Non-Equilibrium Green’s Function (NEGF) , High Frequency , Two-Dimensional FET model
Full-Text [PDF 247 kb]   (2776 Downloads)    
Type of Study: Research Paper | Subject: Semiconductor Devices
Received: 2016/06/20 | Revised: 2017/08/23 | Accepted: 2016/06/20
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.