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Abstract:   (352 Views)
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-length region 1.55 μm where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the quantum efficiency approaches about 90%.
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Type of Study: Research Paper | Subject: Optoelectronics and Photonics
Received: 2018/06/12 | Accepted: 2019/03/20 | Published: 2019/03/21

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© 2019 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.