Volume 15, Issue 4 (December 2019)                   IJEEE 2019, 15(4): 509-515 | Back to browse issues page

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Baldawi T, Abuelhaija A. Modelling of High Quantum Efficiency Avalanche Photodiode. IJEEE 2019; 15 (4) :509-515
URL: http://ijeee.iust.ac.ir/article-1-1295-en.html
Abstract:   (2646 Views)
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-length region 1.55μm where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the quantum efficiency approaches about 90%.
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Type of Study: Research Paper | Subject: Optoelectronics and Photonics
Received: 2018/06/12 | Revised: 2019/03/19 | Accepted: 2019/03/20

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Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.