Volume 6, Issue 2 (June 2010)                   IJEEE 2010, 6(2): 77-83 | Back to browse issues page

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Fathipour M, Refan M H, Ebrahimi S M. Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping. IJEEE. 2010; 6 (2) :77-83
URL: http://ijeee.iust.ac.ir/article-1-290-en.html
Abstract:   (7171 Views)
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.
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Type of Study: Research Paper | Subject: Electronic Devices
Received: 2010/06/09