Volume 6, Number 2 (June 2010)                   IJEEE 2010, 6(2): 77-83 | Back to browse issues page


XML Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Fathipour M, Refan M H, Ebrahimi S M. Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping. IJEEE. 2010; 6 (2) :77-83
URL: http://ijeee.iust.ac.ir/article-1-290-en.html

Abstract:   (6551 Views)
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.
Full-Text [PDF 476 kb]   (2385 Downloads)    
Type of Study: Research Paper | Subject: Electronic Devices
Received: 2010/06/09

Add your comments about this article : Your username or email:
Write the security code in the box