Volume 6, Issue 2 (June 2010)                   IJEEE 2010, 6(2): 77-83 | Back to browse issues page

XML Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Fathipour M, Refan M H, Ebrahimi S M. Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping. IJEEE 2010; 6 (2) :77-83
URL: http://ijeee.iust.ac.ir/article-1-290-en.html
Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
M. Fathipour , M. H. Refan , S. M. Ebrahimi
Abstract:   (11466 Views)
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.
Keywords: Natural Frequencies , Pull-in Voltage , Retrograde Channel , Resonant Suspended Gate (RSG) MOSFET
Full-Text [PDF 476 kb]   (4403 Downloads)    
Type of Study: Research Paper | Subject: Electronic Devices
Received: 2010/06/09
Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
Creative Commons License
© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.